| Issue |
Title |
File |
| Vol 61, No 10 (2016) |
Experimental investigation and calculation of the spectral dependence of the absorption coefficient of single-layer epitaxial HgCdTe structures |
(Eng)
|
|
Iakovleva N.I., Nikonov A.V., Shabarov V.V.
|
| Vol 61, No 10 (2016) |
Investigation of 1024 × 10 multirow focal plane arrays based on the solid solution of mercury–cadmium–telluride |
(Eng)
|
|
Solyakov V.N., Bochkov V.D., Drazhnikov B.N., Kuznetsov P.A., Kozlov K.V.
|
| Vol 61, No 10 (2016) |
Principles of an analytical method of optimization of structure parameters of avalanche heterophotodiodes with separated regions of absorption and multiplication |
(Eng)
|
|
Burlakov I.D., Drugova A.A., Kholodnov V.A.
|
| Vol 61, No 10 (2016) |
Comparative analysis of readout large-scale integrated circuits with an analog-to-digital converter in the cell for a photodetector of the far infrared range |
(Eng)
|
|
Kuznetsov P.A., Moshchev I.S.
|
| Vol 61, No 10 (2016) |
Advantages of solid-state photodetectors for a spectral interval of 1.4–1.7 μm in night-vision devices |
(Eng)
|
|
Gusarova N.I., Koshchavtsev N.F., Popov S.V.
|
| Vol 61, No 10 (2016) |
Photoresistors with the gray code on the CdxHg1 – xTe heteroepitaxial structures for a spectral interval of 2–11 μm with thermoelectric cooling |
(Eng)
|
|
Filatov A.V., Karpov V.V., Susov E.V., Gribanov A.A., Kuznetsov N.S., Petrenko V.I.
|
| Vol 61, No 10 (2016) |
Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure |
(Eng)
|
|
Andreev D.S., Boltar K.O., Vlasov P.V., Irodov N.A., Lopuhin A.A.
|
| Vol 61, No 10 (2016) |
Solid state photoelectronics: the current state and new prospects |
(Eng)
|
|
Burlakov I.D., Dirochka A.I., Korneeva M.D., Ponomarenko V.P., Filachev A.M.
|
| Vol 61, No 3 (2016) |
Analytical model used to calculate focal-plane-array parameters |
(Eng)
|
|
Patrashin A.I., Burlakov I.D., Korneeva M.D., Shabarov V.V.
|
| Vol 61, No 3 (2016) |
Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures |
(Eng)
|
|
Iakovleva N.I., Boltar K.O., Sednev M.V., Patrashin A.I., Irodov N.A.
|
| Vol 61, No 3 (2016) |
Focal plane arrays mesastructures formation by ion-beam etching |
(Eng)
|
|
Sednev M.V., Boltar K.O., Sharonov Y.P., Lopukhin A.A.
|
| Vol 61, No 3 (2016) |
Influence of parameters of the semiconductor–dielectric interface on the current of the guard ring of silicon photodiodes |
(Eng)
|
|
Demidov S.S., Klimanov E.A.
|
| Vol 61, No 3 (2016) |
Investigation of the surface roughness of CdZnTe substrates by different techniques of nanometer accuracy |
(Eng)
|
|
Burlakov I.D., Denisov I.A., Sizov A.L., Silina A.A., Smirnova N.A.
|
| Vol 61, No 3 (2016) |
Analytical approach to selection of the optimum structure of avalanche heterophotodiodes based on direct bandgap semiconductors |
(Eng)
|
|
Kholodnov V.A., Burlakov I.D., Drugova A.A.
|
| Vol 61, No 3 (2016) |
Temperature dependence of diffusion length in MCT epitaxial layers |
(Eng)
|
|
Nikiforov I.A., Nikonov A.V., Boltar K.O., Iakovleva N.I.
|
| Vol 61, No 3 (2016) |
320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer |
(Eng)
|
|
Iakovleva N.I., Boltar K.O., Sedneva M.V., Lopukhin A.A., Korotaev E.D.
|
| Vol 61, No 3 (2016) |
Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes |
(Eng)
|
|
Selyakov A.Y., Burlakov I.D., Filachev A.M.
|
| Vol 61, No 3 (2016) |
Characteristics of heteroepitaxial structures AlxGa1–xN for p–i–n diode focal plane arrays |
(Eng)
|
|
Smirnov D.V., Boltar K.O., Sednev M.V., Sharonov Y.P.
|
| 26 - 43 of 43 Items |
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