| Шығарылым |
Атауы |
Файл |
| Том 61, № 10 (2016) |
Solid-state photoelectronics of the ultraviolet range (Review) |
(Eng)
|
|
Boltar K., Burlakov I., Ponomarenko V., Filachev A., Salo V.
|
| Том 61, № 10 (2016) |
Experimental investigation and calculation of the spectral dependence of the absorption coefficient of single-layer epitaxial HgCdTe structures |
(Eng)
|
|
Iakovleva N., Nikonov A., Shabarov V.
|
| Том 61, № 10 (2016) |
Investigation of 1024 × 10 multirow focal plane arrays based on the solid solution of mercury–cadmium–telluride |
(Eng)
|
|
Solyakov V., Bochkov V., Drazhnikov B., Kuznetsov P., Kozlov K.
|
| Том 61, № 10 (2016) |
Principles of an analytical method of optimization of structure parameters of avalanche heterophotodiodes with separated regions of absorption and multiplication |
(Eng)
|
|
Burlakov I., Drugova A., Kholodnov V.
|
| Том 61, № 10 (2016) |
Comparative analysis of readout large-scale integrated circuits with an analog-to-digital converter in the cell for a photodetector of the far infrared range |
(Eng)
|
|
Kuznetsov P., Moshchev I.
|
| Том 61, № 10 (2016) |
Advantages of solid-state photodetectors for a spectral interval of 1.4–1.7 μm in night-vision devices |
(Eng)
|
|
Gusarova N., Koshchavtsev N., Popov S.
|
| Том 61, № 10 (2016) |
Photoresistors with the gray code on the CdxHg1 – xTe heteroepitaxial structures for a spectral interval of 2–11 μm with thermoelectric cooling |
(Eng)
|
|
Filatov A., Karpov V., Susov E., Gribanov A., Kuznetsov N., Petrenko V.
|
| Том 61, № 10 (2016) |
Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure |
(Eng)
|
|
Andreev D., Boltar K., Vlasov P., Irodov N., Lopuhin A.
|
| Том 61, № 3 (2016) |
Temperature dependence of diffusion length in MCT epitaxial layers |
(Eng)
|
|
Nikiforov I., Nikonov A., Boltar K., Iakovleva N.
|
| Том 61, № 3 (2016) |
320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer |
(Eng)
|
|
Iakovleva N., Boltar K., Sedneva M., Lopukhin A., Korotaev E.
|
| Том 61, № 3 (2016) |
Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes |
(Eng)
|
|
Selyakov A., Burlakov I., Filachev A.
|
| Том 61, № 3 (2016) |
Characteristics of heteroepitaxial structures AlxGa1–xN for p–i–n diode focal plane arrays |
(Eng)
|
|
Smirnov D., Boltar K., Sednev M., Sharonov Y.
|
| Том 61, № 3 (2016) |
Analytical model used to calculate focal-plane-array parameters |
(Eng)
|
|
Patrashin A., Burlakov I., Korneeva M., Shabarov V.
|
| Том 61, № 3 (2016) |
Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures |
(Eng)
|
|
Iakovleva N., Boltar K., Sednev M., Patrashin A., Irodov N.
|
| Том 61, № 3 (2016) |
Focal plane arrays mesastructures formation by ion-beam etching |
(Eng)
|
|
Sednev M., Boltar K., Sharonov Y., Lopukhin A.
|
| Том 61, № 3 (2016) |
Influence of parameters of the semiconductor–dielectric interface on the current of the guard ring of silicon photodiodes |
(Eng)
|
|
Demidov S., Klimanov E.
|
| Том 61, № 3 (2016) |
Investigation of the surface roughness of CdZnTe substrates by different techniques of nanometer accuracy |
(Eng)
|
|
Burlakov I., Denisov I., Sizov A., Silina A., Smirnova N.
|
| Том 61, № 3 (2016) |
Analytical approach to selection of the optimum structure of avalanche heterophotodiodes based on direct bandgap semiconductors |
(Eng)
|
|
Kholodnov V., Burlakov I., Drugova A.
|
| Нәтижелер 43 - 26/43 |
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