Photoresistors with the gray code on the CdxHg1 – xTe heteroepitaxial structures for a spectral interval of 2–11 μm with thermoelectric cooling
- Authors: Filatov A.V.1, Karpov V.V.1, Susov E.V.1, Gribanov A.A.1, Kuznetsov N.S.1, Petrenko V.I.1
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Affiliations:
- JSC “Shvabe-Photosystems,”
- Issue: Vol 61, No 10 (2016)
- Pages: 1215-1219
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/197518
- DOI: https://doi.org/10.1134/S1064226916100132
- ID: 197518
Cite item
Abstract
Photoresistors with thermoelectric cooling of photosensitive elements are developed in the topology of the five-digit Gray code using the CdxHg1–xTe heteroepitaxial structures produced with the aid of molecular-beam epitaxy. The photoresistors can be used to detect pulsed laser radiation with a wavelength of 10.6 μm. The dependence of the signal-to-noise ratio on the composition of the narrow-band-gap working layer of the epitaxial structure and the structure of the photoresistor is studied.
About the authors
A. V. Filatov
JSC “Shvabe-Photosystems,”
Author for correspondence.
Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545
V. V. Karpov
JSC “Shvabe-Photosystems,”
Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545
E. V. Susov
JSC “Shvabe-Photosystems,”
Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545
A. A. Gribanov
JSC “Shvabe-Photosystems,”
Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545
N. S. Kuznetsov
JSC “Shvabe-Photosystems,”
Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545
V. I. Petrenko
JSC “Shvabe-Photosystems,”
Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545