Influence of parameters of the semiconductor–dielectric interface on the current of the guard ring of silicon photodiodes
- Authors: Demidov S.S.1, Klimanov E.A.1
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Affiliations:
- OAO NPO Orion
- Issue: Vol 61, No 3 (2016)
- Pages: 328-332
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/196842
- DOI: https://doi.org/10.1134/S1064226916030074
- ID: 196842
Cite item
Abstract
Relationships, which determine requirements for the resistance of the inversion layer for decreasing the influence of the guard ring on the dark current and photodiode noisess and allow obtaining the specified intercoupling coefficient between photosensitive elements in multielement photodiodes, are given. It is shown that dependences of the current of the guard ring on the bias voltage and the charge on the Si–SiO2 interface in the presence of the inversion layer satisfy the current generation model in the space-charge region of the current. The resistance of the inversion layer increase with an increase in the bias voltage in accordance with the relationship Ru ∼ V1.5.
Keywords
About the authors
S. S. Demidov
OAO NPO Orion
Author for correspondence.
Email: orion@orion-ir.ru
Russian Federation, Kosinskaya ul. 9, Moscow, 111538
E. A. Klimanov
OAO NPO Orion
Email: orion@orion-ir.ru
Russian Federation, Kosinskaya ul. 9, Moscow, 111538