作者的详细信息
Markevich, V. P.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 6 (2016) | Electronic Properties of Semiconductors | Radiation-induced bistable centers with deep levels in silicon n+–p structures | |
卷 50, 编号 8 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies | |
卷 52, 编号 9 (2018) | Spectroscopy, Interaction with Radiation | Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals |