作者的详细信息
Kogotkov, V.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 5 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates | |
卷 51, 编号 1 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire | |
卷 51, 编号 9 (2017) | Physics of Semiconductor Devices | Hopping conductivity and dielectric relaxation in Schottky barriers on GaN |