作者的详细信息
Bougrov, V.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 10 (2016) | Physics of Semiconductor Devices | On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm | |
卷 51, 编号 2 (2017) | Physics of Semiconductor Devices | Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K | |
卷 52, 编号 8 (2018) | Physics of Semiconductor Devices | Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength |