Автор туралы ақпарат
Bougrov, V.
Шығарылым | Бөлім | Атауы | Файл |
Том 50, № 10 (2016) | Physics of Semiconductor Devices | On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm | |
Том 51, № 2 (2017) | Physics of Semiconductor Devices | Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K | |
Том 52, № 8 (2018) | Physics of Semiconductor Devices | Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength |