作者的详细信息
Pchelyakov, O. P.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 3 (2016) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy | |
卷 52, 编号 3 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands |