作者的详细信息
Alyabina, N. A.
| 期 | 栏目 | 标题 | 文件 |
| 卷 53, 编号 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition |