作者的详细信息
Voelskow, M.
| 期 | 栏目 | 标题 | 文件 |
| 卷 51, 编号 9 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films | |
| 卷 53, 编号 8 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Diffusion and Interaction of In and As Implanted into SiO2 Films |