作者的详细信息
Kalinnikov, M. A.
| 期 | 栏目 | 标题 | 文件 |
| 卷 53, 编号 7 (2019) | Electronic Properties of Semiconductors | Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium | |
| 卷 53, 编号 10 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates |