| 期 |
栏目 |
标题 |
文件 |
| 卷 51, 编号 4 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers |
|
| 卷 51, 编号 7 (2017) |
Electronic Properties of Semiconductors |
Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of Bi2Te3 layered single crystals |
|
| 卷 53, 编号 3 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals |
|
| 卷 53, 编号 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical and Optical Properties of Unrelaxed InAs1 –xSbx Heteroepitaxial Structures |
|
