作者的详细信息
Grekhov, I. V.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 5 (2016) | Physics of Semiconductor Devices | Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO2/Si structure | |
卷 50, 编号 7 (2016) | Electronic Properties of Semiconductors | Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiC | |
卷 51, 编号 3 (2017) | Physics of Semiconductor Devices | Current–voltage characteristics of high-voltage 4H-SiC p+–n0–n+ diodes in the avalanche breakdown mode | |
卷 51, 编号 4 (2017) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling |