作者的详细信息
Fedin, I.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 9 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Formation of the low-resistivity compound Cu3Ge by low-temperature treatment in an atomic hydrogen flux | |
卷 51, 编号 2 (2017) | Physics of Semiconductor Devices | Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment | |
卷 51, 编号 9 (2017) | Physics of Semiconductor Devices | High-voltage MIS-gated GaN transistors | |
卷 53, 编号 2 (2019) | Fabrication, Treatment, and Testing of Materials and Structures | Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers |