| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Resonant features of the terahertz generation in semiconductor nanowires |
|
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
|
| 卷 51, 编号 2 (2017) |
Physics of Semiconductor Devices |
Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K |
|
| 卷 52, 编号 1 (2018) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires |
|
