| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 10 (2016) |
Physics of Semiconductor Devices |
Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling |
|
| 卷 50, 编号 10 (2016) |
Physics of Semiconductor Devices |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures |
|
| 卷 50, 编号 10 (2016) |
Physics of Semiconductor Devices |
Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency |
|
| 卷 51, 编号 2 (2017) |
Physics of Semiconductor Devices |
Specific features of waveguide recombination in laser structures with asymmetric barrier layers |
|
| 卷 51, 编号 4 (2017) |
Physics of Semiconductor Devices |
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme |
|
| 卷 51, 编号 10 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate |
|
| 卷 52, 编号 2 (2018) |
Physics of Semiconductor Devices |
Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers |
|
| 卷 52, 编号 12 (2018) |
Physics of Semiconductor Devices |
Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers |
|
| 卷 52, 编号 14 (2018) |
Lasers and Optoelectronic Devices |
A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers |
|
| 卷 53, 编号 8 (2019) |
Physics of Semiconductor Devices |
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation |
|
| 卷 53, 编号 14 (2019) |
Lasers and Optoelectronic Devices |
Record Low Threshold Current Density in Quantum Dot Microdisk Laser |
|
