作者的详细信息
Kunitsyna, E.
期 | 栏目 | 标题 | 文件 |
卷 50, 编号 10 (2016) | Physics of Semiconductor Devices | Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range | |
卷 52, 编号 8 (2018) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW | |
卷 52, 编号 9 (2018) | Physics of Semiconductor Devices | GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range | |
卷 53, 编号 1 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE |