期 |
栏目 |
标题 |
文件 |
卷 51, 编号 1 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types |
|
卷 51, 编号 8 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties |
|
卷 52, 编号 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) |
|
卷 52, 编号 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy |
|
卷 52, 编号 14 (2018) |
Lasers and Optoelectronic Devices |
Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure |
|