| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates |
|
| 卷 50, 编号 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures |
|
| 卷 53, 编号 1 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe |
|
