作者的详细信息
Makarov, A.
期 | 栏目 | 标题 | 文件 |
卷 51, 编号 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation | |
卷 52, 编号 2 (2018) | Physics of Semiconductor Devices | Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures | |
卷 52, 编号 10 (2018) | Physics of Semiconductor Devices | Analysis of the Features of Hot-Carrier Degradation in FinFETs | |
卷 52, 编号 13 (2018) | Physics of Semiconductor Devices | Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs |