High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy
- 作者: Levin R.1, Vlasov A.1, Smirnov A.1, Pushnyi B.1
-
隶属关系:
- Ioffe Institute
- 期: 卷 53, 编号 12 (2019)
- 页面: 1563-1567
- 栏目: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/207341
- DOI: https://doi.org/10.1134/S1063782619160152
- ID: 207341
如何引用文章
详细
The results of studies of nominally undoped epitaxial p-GaSb layers grown by metal–organic vapor-phase epitaxy at a ratio TMSb/TEGa in the range from 1 to 50 are reported. At the ratio TMSb/TEGa = 50, GaSb epitaxial layers, whose resistivity is 400 Ω cm, are produced. It is shown that, for such layers, the crystal quality assessed by several methods remains comparable to the quality of n-GaSb substrates used for the growth of nominally undoped GaSb layers.
作者简介
R. Levin
Ioffe Institute
编辑信件的主要联系方式.
Email: Lev@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Vlasov
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Smirnov
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
B. Pushnyi
Ioffe Institute
Email: Lev@vpegroup.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021