Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots
- 作者: Derebezov I.1,2, Gaisler V.1,3, Gaisler A.1, Dmitriev D.1, Toropov A.1, von Helversen M.4, de la Haye C.4, Bounouar S.4, Reitzenstein S.4
-
隶属关系:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Siberian State University of Telecommunications and Information Science
- Novosibirsk State University
- Institut für Festkörperphysik, Technische Universität Berlin
- 期: 卷 53, 编号 10 (2019)
- 页面: 1304-1307
- 栏目: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207140
- DOI: https://doi.org/10.1134/S1063782619100063
- ID: 207140
如何引用文章
详细
The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single (111) In(Ga)As quantum dots grown on a (111) BGaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing second-order correlation functions g(2)(τ); g(2)(0) = 0.07. The fine structure of the exciton states of (111) In(Ga)As quantum dots is investigated. It is shown that, in the energy range of 1.320–1.345 eV, the splitting of exciton states is comparable to the natural width of the exciton lines, which is of interest for developing photon-pair emitters based on them.
作者简介
I. Derebezov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Telecommunications and Information Science
编辑信件的主要联系方式.
Email: derebezov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630102
V. Gaisler
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: derebezov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
A. Gaisler
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
D. Dmitriev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Toropov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
M. von Helversen
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
德国, Berlin, 10623
C. de la Haye
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
德国, Berlin, 10623
S. Bounouar
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
德国, Berlin, 10623
S. Reitzenstein
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
德国, Berlin, 10623