Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots
- Autores: Derebezov I.1,2, Gaisler V.1,3, Gaisler A.1, Dmitriev D.1, Toropov A.1, von Helversen M.4, de la Haye C.4, Bounouar S.4, Reitzenstein S.4
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Afiliações:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Siberian State University of Telecommunications and Information Science
- Novosibirsk State University
- Institut für Festkörperphysik, Technische Universität Berlin
- Edição: Volume 53, Nº 10 (2019)
- Páginas: 1304-1307
- Seção: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207140
- DOI: https://doi.org/10.1134/S1063782619100063
- ID: 207140
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Resumo
The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single (111) In(Ga)As quantum dots grown on a (111) BGaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing second-order correlation functions g(2)(τ); g(2)(0) = 0.07. The fine structure of the exciton states of (111) In(Ga)As quantum dots is investigated. It is shown that, in the energy range of 1.320–1.345 eV, the splitting of exciton states is comparable to the natural width of the exciton lines, which is of interest for developing photon-pair emitters based on them.
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Sobre autores
I. Derebezov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Telecommunications and Information Science
Autor responsável pela correspondência
Email: derebezov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630102
V. Gaisler
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: derebezov@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
A. Gaisler
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
Rússia, Novosibirsk, 630090
D. Dmitriev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Toropov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
Rússia, Novosibirsk, 630090
M. von Helversen
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Alemanha, Berlin, 10623
C. de la Haye
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Alemanha, Berlin, 10623
S. Bounouar
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Alemanha, Berlin, 10623
S. Reitzenstein
Institut für Festkörperphysik, Technische Universität Berlin
Email: derebezov@isp.nsc.ru
Alemanha, Berlin, 10623