Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature

T. A. Uaman Svetikova; A. V. Ikonnikov; V. V. Rumyantsev; D. V. Kozlov; V. I. Chernichkin; A. V. Galeeva; V. S. Varavin; N. N. Mikhailov; S. A. Dvoretskii; S. V. Morozov; V. I. Gavrilenko

doi:10.1134/S1063782619090240

Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature

作者: Uaman Svetikova T.¹, Ikonnikov A.¹, Rumyantsev V.², Kozlov D.², Chernichkin V.¹, Galeeva A.¹, Varavin V.³, Mikhailov N.³, Dvoretskii S.³, Morozov S.², Gavrilenko V.²
隶属关系:
1. Moscow State University
2. Institute for Physics of Microstructures, Russian Academy of Sciences
3. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
期: 卷 53, 编号 9 (2019)
页面: 1266-1271
栏目: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
URL: https://journals.rcsi.science/1063-7826/article/view/207063
DOI: https://doi.org/10.1134/S1063782619090240
ID: 207063

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
统计

详细

The photoconductivity spectra of epitaxial CdHgTe films are investigated by Fourier-transform spectroscopy at various temperatures. Features associated with both the interband absorption and ionization of impurity/defect states are found in the spectra. Their evolution with temperature is traced. The temperatures of “vanishing” of the impurity features are determined, which makes it possible to assess the acceptor concentration in the structures under study using the electroneutrality equation.

关键词

photoconductivity, impurity, CdHgTe, Fourier-transform spectroscopy

用户名
密码
记住我

忘记您的密码?	注册

用户名
密码
记住我

忘记您的密码?	注册

Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature

全文:

详细

关键词

作者简介

T. Uaman Svetikova

A. Ikonnikov

V. Rumyantsev

D. Kozlov

V. Chernichkin

A. Galeeva

V. Varavin

N. Mikhailov

S. Dvoretskii

S. Morozov

V. Gavrilenko