Email this article Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature
- Authors: Uaman Svetikova T.A.1, Ikonnikov A.V.1, Rumyantsev V.V.2, Kozlov D.V.2, Chernichkin V.I.1, Galeeva A.V.1, Varavin V.S.3, Mikhailov N.N.3, Dvoretskii S.A.3, Morozov S.V.2, Gavrilenko V.I.2
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Affiliations:
- Moscow State University
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Issue: Vol 53, No 9 (2019)
- Pages: 1266-1271
- Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207063
- DOI: https://doi.org/10.1134/S1063782619090240
- ID: 207063
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Abstract
The photoconductivity spectra of epitaxial CdHgTe films are investigated by Fourier-transform spectroscopy at various temperatures. Features associated with both the interband absorption and ionization of impurity/defect states are found in the spectra. Their evolution with temperature is traced. The temperatures of “vanishing” of the impurity features are determined, which makes it possible to assess the acceptor concentration in the structures under study using the electroneutrality equation.
About the authors
T. A. Uaman Svetikova
Moscow State University
Email: antikon@physics.msu.ru
Russian Federation, Moscow, 119991
A. V. Ikonnikov
Moscow State University
Author for correspondence.
Email: antikon@physics.msu.ru
Russian Federation, Moscow, 119991
V. V. Rumyantsev
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: antikon@physics.msu.ru
Russian Federation, Nizhny Novgorod, 603950
D. V. Kozlov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: antikon@physics.msu.ru
Russian Federation, Nizhny Novgorod, 603950
V. I. Chernichkin
Moscow State University
Email: antikon@physics.msu.ru
Russian Federation, Moscow, 119991
A. V. Galeeva
Moscow State University
Email: antikon@physics.msu.ru
Russian Federation, Moscow, 119991
V. S. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: antikon@physics.msu.ru
Russian Federation, Novosibirsk, 630090
N. N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: antikon@physics.msu.ru
Russian Federation, Novosibirsk, 630090
S. A. Dvoretskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: antikon@physics.msu.ru
Russian Federation, Novosibirsk, 630090
S. V. Morozov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: antikon@physics.msu.ru
Russian Federation, Nizhny Novgorod, 603950
V. I. Gavrilenko
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: antikon@physics.msu.ru
Russian Federation, Nizhny Novgorod, 603950
