On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures


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详细

The results of studying GaInAs/GaInP/GaAs photodiode structures grown by metal–organic vapor-phase epitaxy are reported. A procedure for the diagnostics of such multilayer structures is developed. The procedure is based on the application of Raman spectroscopy in combination with photoluminescence spectroscopy in the mode of the lateral scanning of transverse cleavages. The compositions of the GaInAs and GaInP solid solutions are determined.

作者简介

S. Plankina

Lobachevsky State University of Nizhny Novgorod

编辑信件的主要联系方式.
Email: plankina@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

O. Vikhrova

Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod

Email: plankina@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

B. Zvonkov

Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod

Email: plankina@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

S. Zubkov

Lobachevsky State University of Nizhny Novgorod

Email: plankina@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

R. Kriukov

Lobachevsky State University of Nizhny Novgorod

Email: plankina@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

A. Nezhdanov

Lobachevsky State University of Nizhny Novgorod

Email: plankina@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

D. Pavlov

Lobachevsky State University of Nizhny Novgorod

Email: plankina@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

I. Pashen’kin

Institute for Physics of Microstructures, Russian Academy of Sciences

Email: plankina@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950

A. Sushkov

Lobachevsky State University of Nizhny Novgorod

Email: plankina@phys.unn.ru
俄罗斯联邦, Nizhny Novgorod, 603950


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