Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon
- 作者: Balakshin Y.1,2, Kozhemiako A.3, Petrovic S.4, Erich M.4, Shemukhin A.1,2, Chernysh V.3
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隶属关系:
- Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University
- Center for Quantum Technologies, Moscow State University
- Faculty of Physics, Moscow State University
- Vinća Institute of Nuclear Sciences
- 期: 卷 53, 编号 8 (2019)
- 页面: 1011-1017
- 栏目: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/206579
- DOI: https://doi.org/10.1134/S1063782619080062
- ID: 206579
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详细
Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (1014–1015) ion/cm2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.
作者简介
Yu. Balakshin
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University; Center for Quantum Technologies, Moscow State University
编辑信件的主要联系方式.
Email: balakshiny@gmail.com
俄罗斯联邦, Moscow, 119234; Moscow, 119991
A. Kozhemiako
Faculty of Physics, Moscow State University
Email: balakshiny@gmail.com
俄罗斯联邦, Moscow, 119991
S. Petrovic
Vinća Institute of Nuclear Sciences
Email: balakshiny@gmail.com
, Belgrad, Vinća, 11351
M. Erich
Vinća Institute of Nuclear Sciences
Email: balakshiny@gmail.com
, Belgrad, Vinća, 11351
A. Shemukhin
Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University; Center for Quantum Technologies, Moscow State University
Email: balakshiny@gmail.com
俄罗斯联邦, Moscow, 119234; Moscow, 119991
V. Chernysh
Faculty of Physics, Moscow State University
Email: balakshiny@gmail.com
俄罗斯联邦, Moscow, 119991