Structure and Thermoelectric Properties of CoSi-Based Film Composites
- 作者: Kuznetsova V.1, Novikov S.1, Nichenametla C.2, Calvo J.2, Wagner-Reetz M.2
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隶属关系:
- Ioffe Institute
- Fraunhofer Institute for Photonic Microsystems—Center of Nanoelectronic Technologies
- 期: 卷 53, 编号 6 (2019)
- 页面: 775-779
- 栏目: XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/206302
- DOI: https://doi.org/10.1134/S1063782619060101
- ID: 206302
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详细
The properties of Co–Si thin films grown by the thermal sintering of Co and Si layers are studied. Co and Si layers are produced by chemical vapor deposition. To form cobalt silicide, the obtained two-layer structure is annealed at a temperature of 760 K for 12 h. The thermoelectric properties of the film structure are studied in the temperature range of 300–800 K. The temperature dependences of the thermoelectric power and resistivity, as well as structural data, indicate the formation of a multilayer structure containing layers with excess silicon and cobalt.
作者简介
V. Kuznetsova
Ioffe Institute
编辑信件的主要联系方式.
Email: v.kuznetsova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Novikov
Ioffe Institute
Email: v.kuznetsova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
C. Nichenametla
Fraunhofer Institute for Photonic Microsystems—Center of Nanoelectronic Technologies
Email: v.kuznetsova@mail.ioffe.ru
德国, Dresden
J. Calvo
Fraunhofer Institute for Photonic Microsystems—Center of Nanoelectronic Technologies
Email: v.kuznetsova@mail.ioffe.ru
德国, Dresden
M. Wagner-Reetz
Fraunhofer Institute for Photonic Microsystems—Center of Nanoelectronic Technologies
Email: v.kuznetsova@mail.ioffe.ru
德国, Dresden