Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths
- 作者: Dmitriev A.1
-
隶属关系:
- Moscow State University, Physics Faculty
- 期: 卷 53, 编号 4 (2019)
- 页面: 419-427
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/205917
- DOI: https://doi.org/10.1134/S1063782619040079
- ID: 205917
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详细
The full set of thermoelectric parameters of heavily doped p-PbTe in the temperature range of 300–1200 K at an acceptor doping level of Na = 1 × 1019–4 × 1020 cm–3 and a heavy-hole band depth ranging from 0.36 to 0.7 eV is calculated. The figure-of-merit value Z is found to be highly sensitive to the doping level and increased by a factor of 1.5 with an increase in the dopant concentration from 1 × 1019 to 5 × 1019 cm–3; the maximum Z value is found to correspond to Na = (1–2) × 1020 cm–3. It is demonstrated that the change in the heavy-hole band depth leads to a noticeable shift of the Z maximum position along the temperature axis without noticeable Z maximum variation. The temperature corresponding to the maximum Z value is similar to that at which the top of the light-hole band crosses the Fermi level. The maximum calculateded ZT value is shown to be 1.64. At a heavy-hole band depth of 0.5 eV, the calculated results agree well with the available experimental data.
作者简介
A. Dmitriev
Moscow State University, Physics Faculty
编辑信件的主要联系方式.
Email: dmitriev@mig.phys.msu.ru
俄罗斯联邦, Moscow, 119991