Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package)
- 作者: Ivanov P.1, Potapov A.1, Samsonova T.1
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隶属关系:
- Ioffe Institute
- 期: 卷 53, 编号 3 (2019)
- 页面: 385-387
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205881
- DOI: https://doi.org/10.1134/S1063782619030072
- ID: 205881
如何引用文章
详细
Transient process in a resistor–capacitor (RC) circuit with a reverse-biased 4H-SiC p–n diode as the capacitive element is simulated. Simulation is performed with the ATLAS software module from the SILVACO TCAD system for technology computer-aided design (TCAD). An alternative way, to that in ATLAS, to set the parameters of doping impurities partly ionized in 4H-SiC at room temperature is suggested. (The INCOMPLETE physical model available in the ATLAS module, which describes the incomplete ionization of doping impurities in semiconductors, is unsuitable for simulating the dynamic characteristics of devices.) The simulation results are discussed in relation to previously obtained experimental results.
作者简介
P. Ivanov
Ioffe Institute
编辑信件的主要联系方式.
Email: Pavel.Ivanov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Potapov
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
T. Samsonova
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021