MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3
- 作者: Lutsenko E.1, Rzheutski M.1, Vainilovich A.1, Svitsiankou I.1, Shulenkova V.1, Muravitskaya E.1, Alexeev A.2, Petrov S.2, Yablonskii G.1
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隶属关系:
- Stepanov Institute of Physics of National Academy of Sciences of Belarus
- SemiTEq JSC
- 期: 卷 52, 编号 16 (2018)
- 页面: 2107-2110
- 栏目: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
- URL: https://journals.rcsi.science/1063-7826/article/view/205411
- DOI: https://doi.org/10.1134/S1063782618160170
- ID: 205411
如何引用文章
详细
The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal substrate temperature and ammonia flow. Optimal substrate temperature for growth of GaN and AlGaN layers was determined analyzing thermal decomposition rate of GaN. Based on the information, high electron mobility transistor heterostructures were grown on sapphire substrates using both ammonia and combined plasma-assisted/ammonia MBE modes. The highest achieved 2DEG mobility was 1992 cm2/(V s) (at 2DEG density of 1.17 × 1013 cm–2) which is the current state-of-the-art level.
作者简介
E. Lutsenko
Stepanov Institute of Physics of National Academy of Sciences of Belarus
编辑信件的主要联系方式.
Email: e.lutsenko@ifanbel.bas-net.by
白俄罗斯, Minsk, 220072
M. Rzheutski
Stepanov Institute of Physics of National Academy of Sciences of Belarus
Email: e.lutsenko@ifanbel.bas-net.by
白俄罗斯, Minsk, 220072
A. Vainilovich
Stepanov Institute of Physics of National Academy of Sciences of Belarus
Email: e.lutsenko@ifanbel.bas-net.by
白俄罗斯, Minsk, 220072
I. Svitsiankou
Stepanov Institute of Physics of National Academy of Sciences of Belarus
Email: e.lutsenko@ifanbel.bas-net.by
白俄罗斯, Minsk, 220072
V. Shulenkova
Stepanov Institute of Physics of National Academy of Sciences of Belarus
Email: e.lutsenko@ifanbel.bas-net.by
白俄罗斯, Minsk, 220072
E. Muravitskaya
Stepanov Institute of Physics of National Academy of Sciences of Belarus
Email: e.lutsenko@ifanbel.bas-net.by
白俄罗斯, Minsk, 220072
A. Alexeev
SemiTEq JSC
Email: e.lutsenko@ifanbel.bas-net.by
俄罗斯联邦, Saint-Petersburg, 194156
S. Petrov
SemiTEq JSC
Email: e.lutsenko@ifanbel.bas-net.by
俄罗斯联邦, Saint-Petersburg, 194156
G. Yablonskii
Stepanov Institute of Physics of National Academy of Sciences of Belarus
Email: e.lutsenko@ifanbel.bas-net.by
白俄罗斯, Minsk, 220072