Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

S. V. Gudina; I. S. Vasil’evskii; M. V. Yakunin; N. G. Shelushinina; S. M. Podgornykh; A. P. Savelyev; V. N. Neverov; E. I. Ilchenko; Yu. G. Arapov; A. N. Vinichenko

doi:10.1134/S1063782618120102

Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

作者: Gudina S.¹, Vasil’evskii I.², Yakunin M.¹^,3, Shelushinina N.¹, Podgornykh S.¹^,3, Savelyev A.¹, Neverov V.¹, Ilchenko E.¹, Arapov Y.¹, Vinichenko A.²
隶属关系:
1. Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
2. National Research Nuclear University “MEPhI”
3. Yeltsin Ural Federal University
期: 卷 52, 编号 12 (2018)
页面: 1551-1558
栏目: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
URL: https://journals.rcsi.science/1063-7826/article/view/204689
DOI: https://doi.org/10.1134/S1063782618120102
ID: 204689

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The longitudinal ρ_xx and Hall ρ_xy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic fields up to 12 T at temperatures of T = 0.4–30 K in two-dimensional electron systems n-In_0.9Ga_0.1As/In_0.81Al_0.19As. The nonuniversal scaling behavior of the temperature dependence of the width of the resistance ρ_xx peaks related to the effect of the large-scale random potential and of Landau-level mixing with opposite spin directions was found.

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Quantum Hall Effect (QHE), Quantum Phase Transition, Landau Levels, QHE Regime, Opposite Spin Directions

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Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

全文:

详细

关键词

作者简介

S. Gudina

I. Vasil’evskii

M. Yakunin

N. Shelushinina

S. Podgornykh

A. Savelyev

V. Neverov

E. Ilchenko

Yu. Arapov

A. Vinichenko