Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Аннотация

The longitudinal ρ_xx and Hall ρ_xy resistances were measured in the region of the quantum phase transitions for the quantum Hall effect regime with magnetic fields up to 12 T at temperatures of T = 0.4–30 K in two-dimensional electron systems n-In_0.9Ga_0.1As/In_0.81Al_0.19As. The nonuniversal scaling behavior of the temperature dependence of the width of the resistance ρ_xx peaks related to the effect of the large-scale random potential and of Landau-level mixing with opposite spin directions was found.