GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range
- 作者: Kunitsyna E.1, Andreev I.1, Konovalov G.1, Ivanov E.1, Pivovarova A.1, Il’inskaya N.1, Yakovlev Y.1
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隶属关系:
- Ioffe Institute
- 期: 卷 52, 编号 9 (2018)
- 页面: 1215-1220
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204086
- DOI: https://doi.org/10.1134/S1063782618090099
- ID: 204086
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详细
GaSb/GaAlAsSb uncooled photodiodes for the 1.1–1.85 μm spectral range are fabricated and studied. A unique method for the growth of GaSb from lead solution-melts makes it possible to obtain a low carrier concentration in the active region: n = 2 × 1015 cm–3. The capacitance of the photodiodes is 70–110 pF for a sensitive -area diameter of 300 μm and 150–250 pF for a diameter of 500 μm. The photodiodes are characterized by a high (for GaSb devices) spectral sensitivity Sλ = 0.95 A/W at the maximum, a relatively low reverse dark current density j = (4–9) × 10–3 A/cm2 at Urev = 1.0–2.0 V, and high-speed performance (response time 5–10 ns).
作者简介
E. Kunitsyna
Ioffe Institute
编辑信件的主要联系方式.
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Andreev
Ioffe Institute
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
G. Konovalov
Ioffe Institute
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Ivanov
Ioffe Institute
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Pivovarova
Ioffe Institute
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Il’inskaya
Ioffe Institute
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
Yu. Yakovlev
Ioffe Institute
Email: kunits@iropt9.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021