Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions
- 作者: Orletskyi I.1, Ilashchuk M.1, Solovan M.1, Maryanchuk P.1, Parfenyuk O.1, Maistruk E.1, Nichyi S.1
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隶属关系:
- Yuriy Fedkovych Chernivtsi National University
- 期: 卷 52, 编号 9 (2018)
- 页面: 1171-1177
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204044
- DOI: https://doi.org/10.1134/S1063782618090117
- ID: 204044
如何引用文章
详细
The conditions for fabricating n-FeS2/p-Cd1 –xZnxTe heterojunctions by the spray pyrolysis of thin pyrite films on p-Cd1 –xZnxTe crystalline substrates are investigated. A comprehensive analysis of the current–voltage (I–V) and capacitance–voltage (C–V) characteristics makes it possible to establish the limitation of the reverse current by the space-charge region at small reverse biases and consider the mechanisms of current formation with the participation of energy levels near the heterojunction. A model of the energy profile of the n-FeS2/p-Cd1 –xZnxTe heterojunction is proposed, which turns out to be in good correspondence with the experimentally determined parameters and the dynamics of their change with a variation in temperature.
作者简介
I. Orletskyi
Yuriy Fedkovych Chernivtsi National University
编辑信件的主要联系方式.
Email: i.orletskyi@chnu.edu.ua
乌克兰, Chernivtsi, 58012
M. Ilashchuk
Yuriy Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
乌克兰, Chernivtsi, 58012
M. Solovan
Yuriy Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
乌克兰, Chernivtsi, 58012
P. Maryanchuk
Yuriy Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
乌克兰, Chernivtsi, 58012
O. Parfenyuk
Yuriy Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
乌克兰, Chernivtsi, 58012
E. Maistruk
Yuriy Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
乌克兰, Chernivtsi, 58012
S. Nichyi
Yuriy Fedkovych Chernivtsi National University
Email: i.orletskyi@chnu.edu.ua
乌克兰, Chernivtsi, 58012