Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide
- 作者: Seredin P.1, Lenshin A.1, Fedyukin A.1, Goloshchapov D.1, Lukin A.1, Arsentyev I.2, Zhabotinsky A.2
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隶属关系:
- Voronezh State University
- Ioffe Institute
- 期: 卷 52, 编号 9 (2018)
- 页面: 1163-1170
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204038
- DOI: https://doi.org/10.1134/S1063782618090154
- ID: 204038
如何引用文章
详细
The properties of porous GaAs samples produced by the electrochemical etching of single-crystal n-GaAs(100) wafers are studied by X-ray diffraction analysis, electron microscopy, and infrared and ultraviolet spectroscopy. It is possible to show that, by choosing the composition of the electrolyte and the conditions of etching, samples can be produced not only with different degrees of porosity and pore sizes (nanopores/micropores), but with another type of sample surface as well. The etching of n-GaAs(100) wafers under the conditions chosen in the study does not change the orientation of the porous layer with respect to the orientation of the single-crystal GaAs(100) substrate. At the same time, etching induces a decrease in the half-width of the diffraction peak compared to that for the initial wafer, a splitting of the phonon mode in the infrared spectra and a partial shift of the components in accordance with the parameters of anodic etching, and a change in the optical properties in the ultraviolet region.
作者简介
P. Seredin
Voronezh State University
编辑信件的主要联系方式.
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
A. Lenshin
Voronezh State University
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
A. Fedyukin
Voronezh State University
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
D. Goloshchapov
Voronezh State University
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
A. Lukin
Voronezh State University
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
I. Arsentyev
Ioffe Institute
Email: paul@phys.vsu.ru
俄罗斯联邦, St. Petersburg, 194021
A. Zhabotinsky
Ioffe Institute
Email: paul@phys.vsu.ru
俄罗斯联邦, St. Petersburg, 194021