Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface
- 作者: Smagina Z.1, Zinovyev V.1, Krivyakin G.1,2, Rodyakina E.1,2, Kuchinskaya P.1, Fomin B.1, Yablonskiy A.3, Stepikhova M.3, Novikov A.3, Dvurechenskii A.1,2
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隶属关系:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Institute for Physics of Microstructures, Russian Academy of Sciences
- 期: 卷 52, 编号 9 (2018)
- 页面: 1150-1155
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/204015
- DOI: https://doi.org/10.1134/S1063782618090191
- ID: 204015
如何引用文章
详细
A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and inter-pit spacing on the nucleation and growth of Ge(Si) nanoislands is studied. It is shown, that the nanoislands are formed either inside pits or at their periphery depending on the pit depth. It is found that the size of the nanoislands grown inside the pits goes up with the increase of the inter-pit distance from 1 to 4 μm. The pronounced photoluminescence signal related with the space-arranged arrays of quantum dots with a period of 1 μm is observed in the range of energies from 0.9 to 1.0 eV.
作者简介
Zh. Smagina
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: smagina@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Zinovyev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
G. Krivyakin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: smagina@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
E. Rodyakina
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: smagina@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
P. Kuchinskaya
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
B. Fomin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Yablonskiy
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
俄罗斯联邦, Nizhny Novgorod, 603950
M. Stepikhova
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Novikov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Dvurechenskii
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: smagina@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090