Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface
- Авторлар: Smagina Z.1, Zinovyev V.1, Krivyakin G.1,2, Rodyakina E.1,2, Kuchinskaya P.1, Fomin B.1, Yablonskiy A.3, Stepikhova M.3, Novikov A.3, Dvurechenskii A.1,2
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Мекемелер:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Шығарылым: Том 52, № 9 (2018)
- Беттер: 1150-1155
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/204015
- DOI: https://doi.org/10.1134/S1063782618090191
- ID: 204015
Дәйексөз келтіру
Аннотация
A method for creation of Ge/Si structures with space-arranged nanoislands by heteroepitaxy on the pre-patterned Si(001) substrates with a square grid of the etched pits is developed. The influence of depth and inter-pit spacing on the nucleation and growth of Ge(Si) nanoislands is studied. It is shown, that the nanoislands are formed either inside pits or at their periphery depending on the pit depth. It is found that the size of the nanoislands grown inside the pits goes up with the increase of the inter-pit distance from 1 to 4 μm. The pronounced photoluminescence signal related with the space-arranged arrays of quantum dots with a period of 1 μm is observed in the range of energies from 0.9 to 1.0 eV.
Авторлар туралы
Zh. Smagina
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: smagina@isp.nsc.ru
Ресей, Novosibirsk, 630090
V. Zinovyev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Ресей, Novosibirsk, 630090
G. Krivyakin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: smagina@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
E. Rodyakina
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: smagina@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
P. Kuchinskaya
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Ресей, Novosibirsk, 630090
B. Fomin
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Yablonskiy
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Ресей, Nizhny Novgorod, 603950
M. Stepikhova
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Ресей, Nizhny Novgorod, 603950
A. Novikov
Institute for Physics of Microstructures, Russian Academy of Sciences
Email: smagina@isp.nsc.ru
Ресей, Nizhny Novgorod, 603950
A. Dvurechenskii
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: smagina@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090