Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System
- 作者: Emtsev V.1, Gushchina E.1, Petrov V.1, Tal’nishnih N.2, Chernyakov A.2, Shabunina E.1, Shmidt N.1, Usikov A.3, Kartashova A.1, Zybin A.4, Kozlovski V.5, Kudoyarov M.1, Saharov A.1, Oganesyan A.1, Poloskin D.1, Lundin V.1
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隶属关系:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Nitride Crystals Inc.
- JSC Svetlana-Electronpribor
- Peter the Great St. Petersburg Polytechnic University
- 期: 卷 52, 编号 7 (2018)
- 页面: 942-949
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/203744
- DOI: https://doi.org/10.1134/S1063782618070072
- ID: 203744
如何引用文章
详细
A fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are determined not only by the growth conditions. It is shown that the diversity of the electrical and optical properties of InGaN/GaN LEDs (light-emitting diodes) emitting at wavelengths of 450–460 and 519–530 nm, as well as that of the electrical properties of AlGaN/GaN HEMT (high-electron-mobility transistor) structures, is due to modification of the properties of the fractal-percolation system both during the growth process and under the action of the injection current and irradiation. The influence exerted by these specific features on the service life of light-emitting devices and on the reliability of AlGaN/GaN HEMT structures is discussed.
作者简介
V. Emtsev
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Gushchina
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Petrov
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Tal’nishnih
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Chernyakov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
E. Shabunina
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Shmidt
Ioffe Institute
编辑信件的主要联系方式.
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Usikov
Nitride Crystals Inc.
Email: Natalia.Shmidt@mail.ioffe.ru
美国, 181 E Industry Ct., Ste. B, Deer Park, NY, 11729
A. Kartashova
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Zybin
JSC Svetlana-Electronpribor
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194156
V. Kozlovski
Peter the Great St. Petersburg Polytechnic University
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
M. Kudoyarov
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Saharov
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Oganesyan
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
D. Poloskin
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Lundin
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021