Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System
- Authors: Emtsev V.V.1, Gushchina E.V.1, Petrov V.N.1, Tal’nishnih N.A.2, Chernyakov A.E.2, Shabunina E.I.1, Shmidt N.M.1, Usikov A.S.3, Kartashova A.P.1, Zybin A.A.4, Kozlovski V.V.5, Kudoyarov M.F.1, Saharov A.V.1, Oganesyan A.G.1, Poloskin D.S.1, Lundin V.V.1
-
Affiliations:
- Ioffe Institute
- Submicron Heterostructures for Microelectronics Research and Engineering Center
- Nitride Crystals Inc.
- JSC Svetlana-Electronpribor
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 52, No 7 (2018)
- Pages: 942-949
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/203744
- DOI: https://doi.org/10.1134/S1063782618070072
- ID: 203744
Cite item
Abstract
A fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are determined not only by the growth conditions. It is shown that the diversity of the electrical and optical properties of InGaN/GaN LEDs (light-emitting diodes) emitting at wavelengths of 450–460 and 519–530 nm, as well as that of the electrical properties of AlGaN/GaN HEMT (high-electron-mobility transistor) structures, is due to modification of the properties of the fractal-percolation system both during the growth process and under the action of the injection current and irradiation. The influence exerted by these specific features on the service life of light-emitting devices and on the reliability of AlGaN/GaN HEMT structures is discussed.
About the authors
V. V. Emtsev
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. V. Gushchina
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. N. Petrov
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. A. Tal’nishnih
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. E. Chernyakov
Submicron Heterostructures for Microelectronics Research and Engineering Center
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. I. Shabunina
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. M. Shmidt
Ioffe Institute
Author for correspondence.
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. S. Usikov
Nitride Crystals Inc.
Email: Natalia.Shmidt@mail.ioffe.ru
United States, 181 E Industry Ct., Ste. B, Deer Park, NY, 11729
A. P. Kartashova
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Zybin
JSC Svetlana-Electronpribor
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194156
V. V. Kozlovski
Peter the Great St. Petersburg Polytechnic University
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
M. F. Kudoyarov
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Saharov
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. G. Oganesyan
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. S. Poloskin
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. V. Lundin
Ioffe Institute
Email: Natalia.Shmidt@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021