Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films


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The effect of the surface on the I–V characteristics of PbSnTe:In film-based structures is investigated in zero magnetic field and in a magnetic field of B ≤ 4 T with different orientations, including in the mode of current limited by space charge. Analysis of the features in the experimental data obtained at different magnetic-field directions and upon layer-by-layer etching of the films shows that the contributions of the free film surface and interface with the substrate to transport phenomena are significantly different and can be caused by a difference in the parameters of localization centers near these surfaces.

作者简介

A. Akimov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: epov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

A. Klimov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University

Email: epov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630073

S. Suprun

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: epov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090

V. Epov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

编辑信件的主要联系方式.
Email: epov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090


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