Effect of the surface on transport phenomena in PbSnTe:In/BaF2 films
- 作者: Akimov A.1, Klimov A.1,2, Suprun S.1, Epov V.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State Technical University
- 期: 卷 51, 编号 11 (2017)
- 页面: 1517-1521
- 栏目: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201877
- DOI: https://doi.org/10.1134/S1063782617110021
- ID: 201877
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详细
The effect of the surface on the I–V characteristics of PbSnTe:In film-based structures is investigated in zero magnetic field and in a magnetic field of B ≤ 4 T with different orientations, including in the mode of current limited by space charge. Analysis of the features in the experimental data obtained at different magnetic-field directions and upon layer-by-layer etching of the films shows that the contributions of the free film surface and interface with the substrate to transport phenomena are significantly different and can be caused by a difference in the parameters of localization centers near these surfaces.
作者简介
A. Akimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: epov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State Technical University
Email: epov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630073
S. Suprun
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: epov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Epov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: epov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090