Transient switch-off of a 4H-SiC bipolar transistor from the deep-saturation mode
- 作者: Yuferev V.1, Levinshtein M.1, Ivanov P.1, Zhang J.2, Palmour J.2
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隶属关系:
- Ioffe Institute
- Wolfspeed, A Cree company
- 期: 卷 51, 编号 9 (2017)
- 页面: 1194-1199
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201174
- DOI: https://doi.org/10.1134/S1063782617090238
- ID: 201174
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详细
The transient switch-off of a bipolar 4H-SiC transistor from the deep-saturation mode is studied by performing 1D numerical simulation. Switch-off in the zero base current mode and in the mode of switching-off with a negative base current is examined. It is shown that at quite real values of the switching-off base current, the switch-off time can be made ~40 times shorter than the switch-off time at zero base current. The delay time can also be made substantially (several times) shorter. It is noted that, in the deep saturation mode in which the conductivity of the collector layer is highly modulated by minority carriers, the bipolar transistor can operate in the continuous mode at a rather high current density.
作者简介
V. Yuferev
Ioffe Institute
Email: Melev@nimis.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Levinshtein
Ioffe Institute
编辑信件的主要联系方式.
Email: Melev@nimis.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
P. Ivanov
Ioffe Institute
Email: Melev@nimis.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
Jon Zhang
Wolfspeed, A Cree company
Email: Melev@nimis.ioffe.ru
美国, Research Triangle Park, NC, 27709
John Palmour
Wolfspeed, A Cree company
Email: Melev@nimis.ioffe.ru
美国, Research Triangle Park, NC, 27709