Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…)

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详细

The processes of copper intercalation into the van der Waals gaps of layered ternary alloys of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…) to modify the electrical, mechanical, and other physical properties of samples are studied. A proportional decrease in the intercalated copper concentration ΔNCu with decreasing relative volume density of van der Waals gaps DVdW = s–1 and with increasing package plyness s and package thickness ξ1 under variations in the composition of ternary alloys is revealed.

作者简介

M. Kretova

Baikov Institute of Metallurgy and Material Science

Email: korzhuev@imet.ac.ru
俄罗斯联邦, Moscow, 119334

M. Korzhuev

Baikov Institute of Metallurgy and Material Science

编辑信件的主要联系方式.
Email: korzhuev@imet.ac.ru
俄罗斯联邦, Moscow, 119334

E. Avilov

Baikov Institute of Metallurgy and Material Science

Email: korzhuev@imet.ac.ru
俄罗斯联邦, Moscow, 119334


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