Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]m[(Bi,Sb)2(Te,Se)3]n (m, n = 0, 1, 2…)

Abstract

The processes of copper intercalation into the van der Waals gaps of layered ternary alloys of the family [(Ge,Sn,Pb)(Te,Se)]_m[(Bi,Sb)₂(Te,Se)₃]_n (m, n = 0, 1, 2…) to modify the electrical, mechanical, and other physical properties of samples are studied. A proportional decrease in the intercalated copper concentration ΔN_Cu with decreasing relative volume density of van der Waals gaps D_VdW = s^–1 and with increasing package plyness s and package thickness ξ₁ under variations in the composition of ternary alloys is revealed.