On the conduction-band structure of bismuth telluride: optical absorption data
- 作者: Veis A.1, Lukyanova L.2, Kutasov V.2
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隶属关系:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- 期: 卷 51, 编号 7 (2017)
- 页面: 836-839
- 栏目: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/200139
- DOI: https://doi.org/10.1134/S1063782617070351
- ID: 200139
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详细
The optical absorption spectra of n-Bi2Te3 in the range 40–300 meV are studied at room temperature in relation to the electron concentration and sample thickness in order to determine the parameters of the additional subband in the conduction band of Bi2Te3 and to clarify the possible effect of this subband on charge-carrier transport. It is shown that bismuth telluride is a direct-gap semiconductor with an additional subband in the conduction band. These data are consistent with the results of studies of quantum oscillations in n-Bi2Te3 in high magnetic fields at temperatures below 20 K.
作者简介
A. Veis
Peter the Great St. Petersburg Polytechnic University
Email: lidia.lukyanova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
L. Lukyanova
Ioffe Institute
编辑信件的主要联系方式.
Email: lidia.lukyanova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Kutasov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021