On the conduction-band structure of bismuth telluride: optical absorption data
- Authors: Veis A.N.1, Lukyanova L.N.2, Kutasov V.A.2
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Affiliations:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- Issue: Vol 51, No 7 (2017)
- Pages: 836-839
- Section: XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/200139
- DOI: https://doi.org/10.1134/S1063782617070351
- ID: 200139
Cite item
Abstract
The optical absorption spectra of n-Bi2Te3 in the range 40–300 meV are studied at room temperature in relation to the electron concentration and sample thickness in order to determine the parameters of the additional subband in the conduction band of Bi2Te3 and to clarify the possible effect of this subband on charge-carrier transport. It is shown that bismuth telluride is a direct-gap semiconductor with an additional subband in the conduction band. These data are consistent with the results of studies of quantum oscillations in n-Bi2Te3 in high magnetic fields at temperatures below 20 K.
About the authors
A. N. Veis
Peter the Great St. Petersburg Polytechnic University
Email: lidia.lukyanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
L. N. Lukyanova
Ioffe Institute
Author for correspondence.
Email: lidia.lukyanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. A. Kutasov
Ioffe Institute
Email: lidia.lukyanova@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021