On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects
- 作者: Mnatsakanov T.1, Levinshtein M.2, Shuman V.2, Seredin B.3
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隶属关系:
- All-Russia Electrotechnical Institute
- Ioffe Institute
- Platov South-Russian State Polytechnic University
- 期: 卷 51, 编号 6 (2017)
- 页面: 798-802
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/200089
- DOI: https://doi.org/10.1134/S1063782617060227
- ID: 200089
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详细
Analytical expressions describing the dependences of the p+–n-junction leakage current on the doping level of the p+-type region are derived by taking into account a whole set of nonlinear physical effects: electron–hole scattering, Auger recombination, band-gap narrowing, and nonlinear dependences of the charge-carrier lifetime and mobility on the doping level. It is shown that the dependence for the leakage current has a minimum at which the injection ability of the p+-type emitter is at a maximum. The dependence of the extremum position on the main parameters of the heavily doped p+ layer is analyzed. The data obtained make it possible to optimize the structure of high-power silicon devices and to facilitate the adequacy of numerical calculations.
作者简介
T. Mnatsakanov
All-Russia Electrotechnical Institute
编辑信件的主要联系方式.
Email: Melev@nimis.ioffe.ru
俄罗斯联邦, Moscow, 111250
M. Levinshtein
Ioffe Institute
Email: Melev@nimis.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Shuman
Ioffe Institute
Email: Melev@nimis.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
B. Seredin
Platov South-Russian State Polytechnic University
Email: Melev@nimis.ioffe.ru
俄罗斯联邦, Novocherkassk, 346428