n-ZnO/p-CuI barrier heterostructure based on zinc-oxide nanoarrays formed by pulsed electrodeposition and SILAR copper-iodide films
- 作者: Klochko N.1, Kopach V.1, Khrypunov G.1, Korsun V.1, Volkova N.2, Lyubov V.1, Kirichenko M.1, Kopach A.1, Zhadan D.1, Otchenashko A.1
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隶属关系:
- National Technical University “Kharkiv Polytechnic Institute”
- National Aerospace University “Kharkiv Aviation Institute”
- 期: 卷 51, 编号 6 (2017)
- 页面: 789-797
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/200086
- DOI: https://doi.org/10.1134/S106378261706015X
- ID: 200086
如何引用文章
详细
A p-CuI/n-ZnO barrier structure is investigated as a promising base diode structure for a semitransparent near-ultraviolet detector. We analyze the crystal structure and electrical and optical properties of zinc-oxide nanoarrays electrodeposited in the pulsed mode and copper-iodide films formed by the successive ionic layer adsorption and reaction (SILAR) method, which were used as the basis for an n-ZnO/p-CuI barrier heterostructure sensitive to ultraviolet radiation in the spectral range of 365–370 nm. Using the I–V characteristics, a shunting resistance of Rsh · Sc = 879 Ω cm2, a series resistance of Rs · Sc = 8.5 Ω cm2, a diode rectification factor of K = 17.6, a rectifying p–n-junction barrier height of Φ = 1.1 eV, and a diode ideality factor of η = 2.4 are established. It is demonstrated that at low forward biases (0 V < U < 0.15 V), the effects of charge-carrier recombination and tunneling are equal. As the bias increases above 0.15 V, the tunneling–recombination transport mechanism starts working. The diode saturation current J0 is found to be 6.4 × 10–6 mA cm–2 for recombination and tunneling charge-carrier transport and 2.7 × 10–3 mA cm–2 for tunneling–recombination charge-carrier transport.
作者简介
N. Klochko
National Technical University “Kharkiv Polytechnic Institute”
编辑信件的主要联系方式.
Email: klochko_np@mail.ru
乌克兰, Kharkiv, 61000
V. Kopach
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
乌克兰, Kharkiv, 61000
G. Khrypunov
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
乌克兰, Kharkiv, 61000
V. Korsun
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
乌克兰, Kharkiv, 61000
N. Volkova
National Aerospace University “Kharkiv Aviation Institute”
Email: klochko_np@mail.ru
乌克兰, Kharkiv, 61070
V. Lyubov
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
乌克兰, Kharkiv, 61000
M. Kirichenko
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
乌克兰, Kharkiv, 61000
A. Kopach
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
乌克兰, Kharkiv, 61000
D. Zhadan
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
乌克兰, Kharkiv, 61000
A. Otchenashko
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
乌克兰, Kharkiv, 61000