Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering
- 作者: Mezdrogina M.1, Vinogradov A.1, Levitskii V.2, Terukova E.2, Kozhanova Y.3, Aglikov A.2
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隶属关系:
- Ioffe Physical–Technical Institute
- St. Petersburg State Electrotechnical University “LETI”
- Peter the Great St. Petersburg State Polytechnic University
- 期: 卷 51, 编号 5 (2017)
- 页面: 559-564
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199821
- DOI: https://doi.org/10.1134/S1063782617050177
- ID: 199821
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详细
It is demonstrated that a reduction in the defect concentration in ZnO films formed by high-frequency magnetron sputtering allows effective doping with acceptor impurities both in the cation (Li) and anion (N+) sublattices and p-type conductivity with reproducible charge-carrier parameters (concentration and mobility) to be obtained. ZnO films are doped with nitrogen by annealing in a high-frequency gas discharge atmosphere. Hall measurements by the Van der Pauw technique show that the deposition of thin Eu layers on the ZnO film surface increases the concentration and mobility of majority charge carriers. The embedding of metal impurities with different ionic radii (Ag and Au) in the cation sublattice of the ZnO films to compensate misfit stresses makes it possible to enhance the concentration of radiative-recombination centers.
作者简介
M. Mezdrogina
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: Margaret.m@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Vinogradov
Ioffe Physical–Technical Institute
Email: Margaret.m@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Levitskii
St. Petersburg State Electrotechnical University “LETI”
Email: Margaret.m@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197376
E. Terukova
St. Petersburg State Electrotechnical University “LETI”
Email: Margaret.m@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197376
Yu. Kozhanova
Peter the Great St. Petersburg State Polytechnic University
Email: Margaret.m@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
A. Aglikov
St. Petersburg State Electrotechnical University “LETI”
Email: Margaret.m@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 197376