A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum
- 作者: Ionychev V.1, Shesterkina A.1
-
隶属关系:
- Mordovian State University
- 期: 卷 51, 编号 3 (2017)
- 页面: 370-373
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199633
- DOI: https://doi.org/10.1134/S1063782617030083
- ID: 199633
如何引用文章
详细
The statistical delay of microplasma breakdown in GaP light-emitting diodes with the green-emission spectrum is studied. The unusual profound effect of deep centers on the statistical delay of avalanche breakdown is observed in the temperature range of 300–380 K; this effect is caused by a variation in the charge state of these centers due to a reduction in the reverse bias applied to the p–n junction. Four deep levels are revealed and their parameters are determined.
作者简介
V. Ionychev
Mordovian State University
编辑信件的主要联系方式.
Email: microelektro@mail.ru
俄罗斯联邦, Saransk, 430000
A. Shesterkina
Mordovian State University
Email: microelektro@mail.ru
俄罗斯联邦, Saransk, 430000